These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets.
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Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). The complete list of winners, in Chinese, is available at. The Electronic Products China 2013 Product of the Year Award winners were announced in the February 2014 issue of the magazine. Compared to the PowerPAK 1212, the device's PowerPAK 1212-8S package provides a 28 % slimmer nominal profile of 0.75 mm to save valuable board space, while maintaining the same PCB land pattern. The low on-resistance of the Si7655DN allows designers to achieve lower voltage drops in their circuits and promotes more efficient use of power and longer battery run times. These specifications represent an improvement of 17 % or better over the next best competing -20 V devices. Utilizing the new PowerPAK 1212 package version and Vishay Siliconix’s industry- leading p-channel Gen III technology, the Si7655DN provides industry-low maximum on-resistance of 3.6 m? (-10 V), 4.8 m? (-4.5 V), and 8.5 m? (-2.5 V).
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Vishay’s Si7655DN MOSFET was selected because of its demonstrated success in the MOSFET category. The editors of Electronic Products China evaluated hundreds of products launched in China's electronics market in 2013 on the basis of innovative design, significant advancement in technology or application, and substantial achievement in price and performance. The Si7655DN is the industry’s first -20 V p-channel MOSFET in a 3.3 mm by 3.3 mm package to offer on-resistance of just 4.8 m? maximum at a 4.5 V gate drive, and the first device to be released in a new version of the Vishay Siliconix PowerPAK® 1212 package. (NYSE: VSH) today announced that its Si7655DN MOSFET was chosen as a winner in Electronic Products China magazine’s sixth annual Product of the Year Awards.
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E-mail: -20 V P-Channel Device Offers Industry-Low RDS(ON) of 4.8 m? at 4. ENVIRONMENTALAbout VishayAwardsBrandsCareersContactsEthicsInvestor RelationsProduct NewsTerms and ConditionsEventsCompany Info » Product News » 2014 Releases » Vishay Intertechnology’s Si7655DN MOSFET Named as 2013 P.